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Growth Technology of CZ Silicon Single Crystals without Grown-in Defects : Silicon(<Special Issue>Bulk Crystals for Human Activity in the New Millennium)
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- Furuya Hisashi
- Mitsubishi Materials silicon Corporation
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- Harada Kazuhiro
- Mitsubishi Materials silicon Corporation
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- Ikezawa Kazuhiro
- Mitsubishi Materials silicon Corporation
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- Park Jea-Gun
- Advanced Semiconductor Material & Device Development Center, Graduate school of Industry
Bibliographic Information
- Other Title
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- 無欠陥結晶成長技術 : シリコン(<特集>21世紀を担うバルク単結晶)
- 無欠陥結晶成長技術
- ムケッカン ケッショウ セイチョウ ギジュツ
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Description
We have developed the growth technology of grown-in defects free CZ silicon single crystals "Pure Silicon" and have produced them at the mass-production level since December, 1998. Pure Silicon is able to be grown by controlling axial and radial v/G in crystals where v is pulling rate, and G is the temperature gradient at the solid/liquid interface. Pure Silicon can improve dramatically performances and yield of devices because of free of grown-in defects such as COP, void defects, and nuclei of OISF which cause degradation of GOI, junction leakage, and isolation leakage. Pure Silicon is one of the most possible candidates for the future advanced devices even in the production of 12 inch wafers.
Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 27 (2), 22-25, 2000
The Japanese Association for Crystal Growth
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Details 詳細情報について
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- CRID
- 1390282680840671872
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- NII Article ID
- 110002715395
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- NII Book ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL BIB ID
- 5458527
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL Search
- CiNii Articles
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- Abstract License Flag
- Disallowed