Observation of Growth Process of InGaN Thick Layers Grown by Metalorganic Vapor Phase Epitaxy : Formation of Compositional Inhomogenuity(<Special Issue>Crystal Growth of III-Group Nitride-Semiconductors)

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  • Kuwano Noriyuki
    Department of Applied Science for Electronics and Materials, Interdesciplinary Graduate School of Engineering Sciences, Kyushu University
  • Taki Wataru
    Department of Applied Science for Electronics and Materials, Interdesciplinary Graduate School of Engineering Sciences, Kyushu University
  • Oki Kensuke
    Department of Applied Science for Electronics and Materials, Interdesciplinary Graduate School of Engineering Sciences, Kyushu University
  • Kawaguchi Yasutoshi
    Department of Electronics, School of Engineering, Nagoya University
  • Hiramatsu Kazumasa
    Department of Electric and Electronic Engineering, Faculty of Engineering, Mie University
  • Sawaki Nobuhiko
    Department of Electronics, School of Engineering, Nagoya University

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Other Title
  • 有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察 : 組成不均一の発生(<小特集>III族窒化物半導体の結晶成長はどこまで進んだか)
  • 有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察--組成不均一の発生
  • ユウキ キンゾク キソウホウ デ サクセイシタ InGaN アツマク ノ セイ

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Abstract

Transmission electron microscope (TEM) analysis has been carried out for the growth process in thick InGaN layers prepared by metalorganic vapor phase epitaxy. In the case of growth on GaN/LT-AlN/α-Al_2O_3 (0001) , a thin InGaN Layer of a good quality can grow with a smooth interface of InGaN/GaN and a smooth (0001) exterior surface. Threading dislocations in GaN penetrate into the InGaN layer and have a pit on each end on the exterior surface of InGaN. By development of the pits, the InGaN layer becomes to have a shape of pyramids with {11^^-01} facet planes. Thereafter, InGaN with a columnar structure is deposited on the pyramids. A two-layer-structure is thus made in the thick layer. Energy-dispersive x-ray spectroscopy (EDX) analysis has confirmed that the lower layer has a lower In content than in the upper one which has the equilibrium composition In_<0.2>Ga_<0.8>N. The lower In content is attributed to the lattice coherence with GaN, or "composition pulling effect". Small grains of InN have been recognized on the surface of the upper layer of InGaN. The grains keep a good lattice coherency with the InGaN layer. On LT-AlN/α-Al_2O_3 (0001) , InGaN with the equlibrium composition grows in a columnar structure. Inside the InGaN layer, domains of a lower In content have been recognized. The domains have a crystal orientation relationship with the matrix of InGaN. These results suggest that the lattice coherency has a strong effect on the formation of inhomogenous regions in InGaN alloys.

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