LPE Macrosteps and Associated Impurity Inhomogeneity

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  • Nishinaga Tatau
    Department of Electronic Engineering, The Faculty of Engineering, The University of Tokyo
  • Pak Kangsa
    School of Electrical Engineering and Electronics, Toyohashi University of Technology
  • Sasaoka Chiaki
    Department of Electronic Engineering, The Faculty of Engineering, The University of Tokyo

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Other Title
  • LPEマクロステップと不純物不均一分布 : I. 成長誘起不純物偏析現象
  • LPEマクロステップと不純物不均一分布
  • LPE マクロステップ ト フジュンブツ フキンイツ ブンプ

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Description

The behavior of LPE macrostep during the growth was studied by using photoluminescence image and spatially resolved photoluminescence taking GaP doped with zinc, oxygen and nitrogen as examples. It was shown that the impurities were doped much more heavily on the macrostep terrace than on the riser. To understand the impurity inhomogeneity around the macrostep, the interface supersaturation was calculated theoretically around the macrostep by using conformal mapping. The calculation showed that the interfacial supersaturation was very small such as 0.01% and this led to the conclusion that the rejection of the impurity from the growing crystal occurs not at the kink or on the surface of the growth step but at the edge of the step.

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