書誌事項
- タイトル別名
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- Step-Controlled Epitaxial Growth of SiC and Step Dynamics
- SiC ノ ステップ セイギョ エピタキシャル セイチョウ ト ステップダイナ
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抄録
Polytype-controlled epitaxial growth of SiC has been achieved by utilizing step-flow growth on off-oriented SiC{0001} substrates by chemical vapor deposition (step-controlled epitaxy). Very little polarity dependence and small activation energy (2.8 kcal/mol) in step-controlled epitaxy can be explained by the fact that SiC growth is diffusion-control. The step bunching on the surfaces of 6H- and 4H-SiC epilayers is investigated with AFM and cross-sectional TEM. The formation of multisteps with half unit-cell height or unit-cell height (3 or 6 Si-C bilayer-height steps in 6H-SiC) may be inherent to SiC growth, due to the peculiar stacking sequence of SiC. Through short-time growth experiments, nucleation on {0001} terraces and step dynamics are also studied. The polarity dependence of nucleation and the anistropy in lateral growth rate are presented.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 23 (1), 8-15, 1996
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680841320704
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- NII論文ID
- 110002714588
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 3934877
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可