Transmission Electron Microscope Observations of Graphene Produced by SiC Surface Decomposition Method(<Special Topic>Growth of Graphen and its Applications)
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- Norimatsu Wataru
- EcoTopia Science Institute, Nagoya University
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- Kusunoki Michiko
- Japan Fine Ceramics Center
Bibliographic Information
- Other Title
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- SiC表面分解法によるグラフェンの透過型電子顕微鏡観察(<特集>グラフェンの成長と応用)
- SiC表面分解法によるグラフェンの透過型電子顕微鏡観察
- SiC ヒョウメン ブンカイホウ ニ ヨル グラフェン ノ トウカガタ デンシ ケンビキョウ カンサツ
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Abstract
Crystallographic features and a growth mechanism of graphene layers produced by SiC surface decomposition method were revealed using high-resolution transmission electron microscopy. Several layers of graphene on SiC (0001) exhibit ABC-type stacking, suggesting the possibility of electric-field-induced bandgap opening. Graphene nucleates in the vicinity of SiC steps, and then grows laterally over the terrace.
Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 37 (3), 196-202, 2010
The Japanese Association for Crystal Growth
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Details 詳細情報について
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- CRID
- 1390282680872868992
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- NII Article ID
- 110007817400
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- NII Book ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL BIB ID
- 10882003
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed