Transmission Electron Microscope Observations of Graphene Produced by SiC Surface Decomposition Method(<Special Topic>Growth of Graphen and its Applications)

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  • SiC表面分解法によるグラフェンの透過型電子顕微鏡観察(<特集>グラフェンの成長と応用)
  • SiC表面分解法によるグラフェンの透過型電子顕微鏡観察
  • SiC ヒョウメン ブンカイホウ ニ ヨル グラフェン ノ トウカガタ デンシ ケンビキョウ カンサツ

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Abstract

Crystallographic features and a growth mechanism of graphene layers produced by SiC surface decomposition method were revealed using high-resolution transmission electron microscopy. Several layers of graphene on SiC (0001) exhibit ABC-type stacking, suggesting the possibility of electric-field-induced bandgap opening. Graphene nucleates in the vicinity of SiC steps, and then grows laterally over the terrace.

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