書誌事項
- タイトル別名
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- Low-Dislocation-Density Large-Diameter GaAs Single Crystal Grown by Vertical Boat Method(<Special Issue>On the Advanced Control Techniques of Crystal Growth Using Seed Crystals or Nuclei)
- 縦型ボート法で成長した大口径低転位密度GaAs結晶
- タテガタ ボートホウ デ セイチョウ シタ ダイコウケイ テイテンイ ミツド GaAs ケッショウ
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Low-dislocation-density large-diameter GaAs single crystals have been strongly required. We have developed dislocation-free 2-inch to 3-inch Si-doped GaAs single crys-tals, and low-dislocation-density 4-inch to 6-inch semiinsulating GaAs single crystals by vertical boat (VB) method. Such low-dislocation-density large-diameter single crystals could be grown by achievement of the flat solid-liquid interface during the crystal growth. We confirmed that low-residual-strain VB substrate have higher resistance against slip-line generation during MBE process. VB-GaAs crystals showed uniform radial profile of resistivity, due to uniform radial profile of carbon concentration reflecting to the flat solid-liquid interface. Uniformity of micro-resistivity of a VB-GaAS substrate was much better than that of a LEC-GaAS Substrate, which is thought that the concentration of excess arsenic atoms inside the cell of dislocations is higher in VB crystals than in LEC crystals.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 28 (5), 322-329, 2001
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680872894976
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- NII論文ID
- 110002715510
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 6020596
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可