解説 Island Electromigration on Isotropic and Anisotropic Surfaces: Si(111),Si(001)
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- Metois Jean-Jaques
- Centre de Recherche sur les Mecanismes de la Croissance Cristalline, CNRS
書誌事項
- タイトル別名
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- Island Electromigration on Isotropic and Anisotropic Surface: Si(111), Si(001)(<Special Issue>Recent Trend of Crystal Growth Theory)
- カイセツ Island Electromigration on Isotropic and Anisotropic Surfaces Si 111 Si 001
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We have used electron microscopy to study the drift velocity of micrometer-size monolayer-thick silicon islands on Si (001) and Si (111) under near equilibrium conditions and direct current (DC) heating. At temperatures between 1000℃ and 1100℃, the island on Si (001) perform a gliding motion at constant velocity (at a given T) in or against the current direction depending on the island reconstruction. The Stoyanov' model can explain very well this island motion. Concerning the Si (111), our results obtained at around 1200℃ show that the islands move in the opposite direction of DC , this is a qualitative prove of the existence of an Ehrlich-Schoebel effect on Si(111). The model of O. Pierre-Louis and T.L. Einstein can be used to explain this mobility.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 29 (1), 12-16, 2002
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680873432192
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- NII論文ID
- 110002715515
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 6135072
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
