書誌事項
- タイトル別名
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- Non-radiative Investigation of Quantum Well Solar Cell Materials(<Special Issue>Novel Solar Cells Utilizing Nano- and Hetero-Structure)
- 非発光再結合検出による量子ナノ構造太陽電池材料評価
- ヒハッコウ サイケツゴウ ケンシュツ ニ ヨル リョウシ ナノ コウゾウ タイヨウ デンチ ザイリョウ ヒョウカ
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抄録
Inserting quantum wells (QWs) into GaAs p-i-n solar cells could be a potential solution for the beyond the Shockley-Queisser limit. This is because the QWs can extend the absorption region and enhance the short-circuit current. However, they function as the recombination center leading to degradation in open-circuit voltage. We then evaluate the carrier behaviors by detecting the non-radiative recombination utilizing the piezoelectric photothermal (PPT) technique. The PPT spectra were clearly decomposed into excitonic and inter-subband transitions. From the temperature dependencies of radiative and nonradiative recombination and carrier escape from the well, we estimated the activation energies for non-radiative recombination and thermally carrier escape. The usefulness of the PPT methodology for investigating the QWs-embedded solar cells was clearly demonstrated.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 41 (2), 102-109, 2014
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680873461248
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- NII論文ID
- 110009841770
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- NII書誌ID
- AA12677650
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- ISSN
- 21887268
- 21878366
- 03856275
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- NDL書誌ID
- 025609925
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可