AS pressure dependence on Si doping of MBE growth of GaAS on (111)A Substrates with interruption growth

DOI 3 References
  • Ohnishi Y.
    Doshisha University Department of Engineering
  • Ito Y.
    Doshisha University Department of Engineering
  • Nelson J.T.
    Doshisha University Department of Engineering:Nelson Scientific
  • Ohachi T.
    Doshisha University Department of Engineering

Bibliographic Information

Other Title
  • MBE成長GaAs(111)A面の成長中断を用いたSiドープAs圧力依存性 : エピキタシャル成長I

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Description

We grew Si-doped GaAs on GaAs (111)A substrates by molecular beam epitaxy (MBE) with and without growth interruption . Their electric and optical properties were then studied. The amount of acceptor Si that incorporated into GaAs(111)A layer increased by the interruption growth.

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Details 詳細情報について

  • CRID
    1390282680873581056
  • NII Article ID
    110002715552
  • NII Book ID
    AN00188386
  • DOI
    10.19009/jjacg.29.2_25
  • ISSN
    21878366
    03856275
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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