Atomic-scale Fluctuation of InAs-GaAs(001) Surface Reconstruction and Non-classical Nucleation of Quantum Dots(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)

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  • Konishi Tomoya
    Centre for Collaborative Research, National Institute of Technology, Anan College
  • Bell Gavin R.
    Department of Physics, University of Warwick
  • Tsukamoto Shiro
    Centre for Collaborative Research, National Institute of Technology, Anan College

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Other Title
  • InAs-GaAs(001)表面再構成における組成ゆらぎと量子ドットの非古典的核形成(<特集>半導体結晶成長機構のその場観察)
  • InAs-GaAs(001)表面再構成における組成ゆらぎと量子ドットの非古典的核形成
  • InAs-GaAs(001)ヒョウメン サイコウセイ ニ オケル ソセイユラギ ト リョウシ ドット ノ ヒコテンテキカク ケイセイ

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Abstract

The growth of InAs quantum dots on GaAs(001) shows a new aspect of non-classical nucleation, namely the dynamic formation of preferred growth sites within the substrate. Using fully in situ scanning tunnelling microscopy - molecular beam epitaxy, we observe rapidly changing transitions between domains of different surface reconstruction a few nm in size. Nucleation of 3D islands is preferred on one particular reconstruction, blurring the line between heterogeneous and homogeneous nucleation as traditionally understood on a static substrate.

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