放射光その場X線回折による半導体成長機構の解明(<特集>半導体結晶成長機構のその場観察)

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  • 高橋 正光
    日本原子力研究開発機構量子ビーム応用研究センター

書誌事項

タイトル別名
  • Study of Semiconductor Growth Mechanism using in Situ Synchrotron X-ray Diffraction(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)
  • 放射光その場X線回折による半導体成長機構の解明
  • ホウシャコウ ソノ バ Xセン カイセツ ニ ヨル ハンドウタイ セイチョウ キコウ ノ カイメイ

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抄録

An experimental approach to crystal growth dynamics using synchrotron X-ray diffraction is discussed. In the study of crystal growth, analysis of imperfect crystals lacking three-dimensional periodicity is inevitably required. Every real crystal has surfaces, at which the periodicity in the surface normal direction is lost. Defects generated in epitaxial films result in the diffuse scattering around the Bragg peaks. Quantum structures having a finite size yield extended diffraction that gives information about the size, shape and internal strains of the crystal. Although such diffuse scattering is much weaker than the bulk Bragg diffraction, recent development of the synchrotron light source has enabled the in situ measurement of it during crystal growth. In this article, studies on surface structures, evolution of defects in growing films and the growth of nanostructures under molecular-beam epitaxy conditions are presented as well as a brief overview of the instrumentation.

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