SiC Bulk Single Crystal Growth by Sublimation Method and Its In-situ Observation(<Special Issue>Science and Technology in Crystal Growth)

DOI Web Site 13 References
  • Nishizawa Shin-ichi
    Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
  • Yamaguchi Hirotaka
    Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
  • Kato Tomohisa
    Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
  • Oyanagi Naoki
    Advanced power Device Laboratory R & D Association of Future Electron Devices
  • Kitou Yasuo
    Advanced power Device Laboratory R & D Association of Future Electron Devices
  • Arai Kazuo
    Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology

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Other Title
  • 昇華法によるSiC単結晶成長とその場観察(<小特集>バルク成長分科会特集 : 結晶成長の科学と技術)
  • 昇華法によるSiC単結晶成長とその場観察
  • ショウカホウ ニ ヨル SiC タンケッショウ セイチョウ ト ソノバ カンサツ

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Abstract

Silicon carbide (SiC) is the most promising material for high power, high frequency and low loss device applications. In order to realize SiC devices, it is necessary to improve the grown crystal quality. SiC bulk single crystal is grown by sublimation method, inside a closed carbon crucible. Because of the black box process, the optimization of sublimation process is difficult. From this point view the in situ X ray topography system was developed to observe the phenomena inside a crucible during the growth. The numerical simulation was also applied. From these observations, the heat and mass transfer in a crucible was discussed involving in the macroscopic crystal quality, such as crystal diameter, growing surface shape, and also in the microscopic crystal quality such as defect generations.

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