高圧溶液成長法によるバルクGaN単結晶の成長(<小特集>バルク成長分科会特集 : 結晶成長の科学と技術)

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タイトル別名
  • Growth of Bulk GaN Single Crystals by the Solution Growth Method under High-Pressure(<Special Issue>Science and Technology in Crystal Growth)
  • 高圧溶液成長法によるバルクGaN単結晶の成長
  • コウアツ ヨウエキ セイチョウホウ ニ ヨル バルク GaN タンケッショウ ノ セイチョウ

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The growth of bulk GaN single crystals by the high-pressure solution growth method under "the Light for the 21st Century" Japanese national project has been carried out using a high-pressure furnace. It was found that the rate of increase of N_2 pressure affected the size of a GaN single crystal. GaN single crystals with an area of about 120 mm^2 were obtained at a rate less than 49 MPa/h. The maximum size of single crystals grown at 1475℃ under a N_2 pressure of 1000 MPa was over 20 mm in diameter. The FWHM of rocking curve measured for (0002) X-ray diffraction peak was 60-120 arcsec and (101^^-1) X-ray diffraction peak was 30-60 arcsec. The dislocation density less than 10^5 cm^<-2> was obtained by TEM image and CL image observations.

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