Growth of InN and its Related Alloys by Vapor Phase Epitaxy(<Special Issue>Breakthrough in Nitride Crystal Growth for Next Generation Devices)

DOI Web Site 27 References
  • Murakami Hisashi
    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Hanaoka Koshi
    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Togashi Rie
    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Inaba Katsuhiko
    X-ray Research Laboratory, Rigaku Corporation
  • Kumagai Yoshinao
    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Koukitu Akinori
    Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology

Bibliographic Information

Other Title
  • In系窒化物半導体のMOVPEおよびHVPE成長(<特集>次世代素子のための窒化物結晶成長新機軸)
  • In系窒化物半導体のMOVPEおよびHVPE成長
  • Inケイ チッカブツ ハンドウタイ ノ MOVPE オヨビ HVPE セイチョウ

Search this article

Abstract

Growth of In-related nitride semiconductors was investigated by means of metalorganic vapor phase epitaxy (MQVPE) and halide vapor phase epitaxy (HVPE). Semi-polar {101^^-3} InN crystal was grown on GaAs (110) substrates by MOVPE. Mechanisms of twin formation and influences of lattice polarity on the crystalline quality of InN were clarified. On the other hand, growth of thick In_xGa_<1-x>N alloy crystal by HVPE was studied by thermodynamic analysis. It is suggested that growth of In_xGa_<1-x>N alloy with good composition controllability is attained even at relatively high growth temperature by the control of V/III ratio and hydrogen partial pressure in the system.

Journal

References(27)*help

See more

Details 詳細情報について

Report a problem

Back to top