Thermophysical Properties Required for Numerical Simulation of Single Crystalline Silicon Growth Processes(<Special Issue>Advanced Devices and, Science and Technology)

DOI Web Site 4 Citations 12 References
  • Fukuyama Hiroyuki
    Dept. of Chemistry & Materials Science, Tokyo Institute of Technology
  • Tsukada Takao
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
  • Watanabe Masahito
    Dept. of Physics, Gakushuin University
  • Tanaka Toshihiro
    Dept. of Materials Science & Processing, Osaka University
  • Baba Tetsuya
    Materials Properties & Metrological Statistics Division, National Institute of Advanced Industrial Science & Technology
  • Hibiya Taketoshi
    Dept. of Aerospace Engineering, Tokyo Metropolitan Institute of Technology

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Other Title
  • シリコン単結晶成長プロセスの数値シミュレーションに要求される熱物性値(<小特集>バルク成長分科会特集-最先端デバイスと科学技術-)
  • 総合報告 シリコン単結晶成長プロセスの数値シミュレーションに要求される熱物性値
  • ソウゴウ ホウコク シリコンタンケッショウ セイチョウ プロセス ノ スウチ シミュレーション ニ ヨウキュウ サレル ネツ ブッセイチ

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Abstract

Thermophysical properties required for numerical simulation of silicon crystal growth processes have been investigated from Japanese silicon wafer producers. Results from the survey are presented for molten silicon, crystalline silicon and refractory materials. Thermal transport properties such as thermal conductivity of both melt and crystal are greatly important. Mechanical properties such as elastic constant of the crystal are required especially at high temperatures. Thermal transport properties of refractory materials are also essential for the global analysis of heat transfer in the furnace. However, refractory data have been kept confidential.

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