High Pressure Synthesis of Defect-free Single Crystal Diamond(<Special Issue>Diamond Growth)

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  • Sumiya Hitoshi
    Advanced Materials R&D Laboratories, Sumitomo Electric Industries, Ltd.

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  • 無欠陥単結晶ダイヤモンドの高圧合成(<特集>ダイヤモンド成長)
  • 無欠陥単結晶ダイヤモンドの高圧合成
  • ムケッカンタンケッショウ ダイヤモンド ノ コウアツ ゴウセイ

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Large high-purity (type IIa) diamond crystals up to 12 mm in diameter were grown by the temperature gradient method at high pressure and high temperature, using high-purity Fe-Co solvent, high-purity carbon source and high-crystalline-quality (001)-oriented seed crystals. The large synthetic IIa diamond crystals are characterized by high-crystalline-quality, having very few dislocations or stacking faults. The X-ray projection topograph revealed that the crystals have no crystal defects especially in the (001) growth sectors in the upper part of the crystals grown on seeds. Diamond crystals containing a large defect free area of 5 × 5 mm^2 or more were successfully obtained by controlling the temperature strictly on the low-temperature side in the synthesis region to allow the (001) growth sectors to become dominant.

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