Present Status of Progresses and Understanding in Techniques to Fabricate Large Size Wafers of Single-crystal Diamond with Sufficiently High Growth Rate(<Special Issue>Diamond Growth)

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  • 単結晶ダイヤモンドウェハのプラズマCVDによる高速・大面積成長(<特集>ダイヤモンド成長)
  • 単結晶ダイヤモンドウェハのプラズマCVDによる高速・大面積成長
  • タンケッショウ ダイヤモンドウェハ ノ プラズマ CVD ニ ヨル コウソク ・ ダイ メンセキ セイチョウ

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Abstract

There are several fundamental and technical issues for realization of industrial use of single-crystal diamond, which has extreme characteristics superior to those of other semiconductor materials, such as Si and SiC. Especially, for production of inch size wafers of single-crystal diamond, it is indispensable to enlarge the size of the seed crystal and establish uniform growth over the large area as well as improvement of the crystal quality. In this paper, present status of the technique to fabricate the wafers and understanding of the growth are summarized.

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