Engineered Lattice-Mismatch by Buffer Layers in Oxide Heteroepitaxy(<Special Issue>Novel Approach to Epitaxial Growth with Buffer Layers)

DOI Web Site 2 Citations 27 References
  • Kawasaki Masashi
    Institute for Materials Research (IMR), Tohoku University:Combinatorial Materials Exploration and Technology (COMET), National Institute for Materials Research (NIMS)
  • Terai Kota
    Synchrotorn Radiation Research Center, Japan Atomic Energy Research Institute
  • Tsukazaki Atsushi
    Institute for Materials Research (IMR), Tohoku University
  • Ohnishi Tsuyoshi
    Institute for Solid State Physics, Tokyo University
  • Ohtomo Akira
    Institute for Materials Research (IMR), Tohoku University
  • Lippmaa Mikk
    Institute for Solid State Physics, Tokyo University

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Other Title
  • バッファー層による酸化物ヘテロエピタキシーの格子不整合エンジニアリング(<小特集>Buffer層を中心としたエピタキシーの新展開)
  • バッファー層による酸化物ヘテロエピタキシーの格子不整合エンジニアリング
  • バッファーソウ ニ ヨル サンカブツ ヘテロエピタキシー ノ コウシ フセイゴウ エンジニアリング

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Abstract

Buffer layer is a quite useful technique for thin film growth; it can act as "glue" between substrate and film and it can relax the lattice mismatch between them. In this article, we discuss in detail the role of buffer layer to relax the lattice mismatch with taking such technologically relevant examples as ferroelectric BaTiO_3 and ultraviolet light emitting ZnO films grown on slightly lattice mismatched substrates. The interface free energy of lattice strain and relaxation by introducing dislocation is discussed from thermodynamic and kinetic view points. By taking this consideration into account, we can selectively make strained films with coherent interface and completely relaxed films. We also demonstrate a way of reducing the activation energy for introducing misfit dislocation. The use of completely relaxed films as buffer layers can mimic lattice constant tunable substrates and may open up an interesting research arena of lattice strain engineering of oxide thin films.

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