パルススパッタ堆積法によるサファイア基板上N極性面InGaN LEDの作製

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タイトル別名
  • Nitrogen-polar InGaN-based LEDs on sapphire fabricated using pulsed sputtering technique

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<p>  We demonstrated the growth of device-quality N-polar GaN films on sapphire (0001) substrates. Specifically, we investigated the crystalline quality of N-polar GaN and basic electrical properties of Mg-doped N-polar GaN films. We found that the dislocation density of PSD-grown N-polar GaN could be reduced with increase in the film thickness. By Mg doping, p-type conductivity in N-polar GaN could be well controlled in the hole concentration range between 8 × 1016 and 2 × 1018 cm−3. With the use of these materials, we demonstrated the successful operation of N-polar InGaN LEDs with a long wavelength up ot 609 nm. The results presented in our manuscript indicate that the PSD growth technique is quite promising for fabricating N-polar devices such as high-efficiency InGaN-based long-wavelength LEDs or solar cells.</p>

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詳細情報 詳細情報について

  • CRID
    1390282680874892288
  • NII論文ID
    130006727549
  • DOI
    10.19009/jjacg.3-45-1-02
  • ISSN
    21878366
    03856275
  • 本文言語コード
    ja
  • データソース種別
    • JaLC
    • CiNii Articles
    • KAKEN
  • 抄録ライセンスフラグ
    使用不可

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