パルススパッタ堆積法によるサファイア基板上N極性面InGaN LEDの作製
書誌事項
- タイトル別名
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- Nitrogen-polar InGaN-based LEDs on sapphire fabricated using pulsed sputtering technique
抄録
<p> We demonstrated the growth of device-quality N-polar GaN films on sapphire (0001) substrates. Specifically, we investigated the crystalline quality of N-polar GaN and basic electrical properties of Mg-doped N-polar GaN films. We found that the dislocation density of PSD-grown N-polar GaN could be reduced with increase in the film thickness. By Mg doping, p-type conductivity in N-polar GaN could be well controlled in the hole concentration range between 8 × 1016 and 2 × 1018 cm−3. With the use of these materials, we demonstrated the successful operation of N-polar InGaN LEDs with a long wavelength up ot 609 nm. The results presented in our manuscript indicate that the PSD growth technique is quite promising for fabricating N-polar devices such as high-efficiency InGaN-based long-wavelength LEDs or solar cells.</p>
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 45 (1), n/a-, 2018
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680874892288
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- NII論文ID
- 130006727549
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- ISSN
- 21878366
- 03856275
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可