Effect of the Inclusion of Transparency on the Thermal Field and Interface Shape in Long-term Sublimation Growth of SiC Crystals(<Special Issue>)Opening Up a New World of Crystal Growth on SiC)

DOI Web Site 参考文献18件
  • Gao Bing
    Research Institute for Applied Mechanics, Kyushu University
  • Kakimoto Koichi
    Research Institute for Applied Mechanics, Kyushu University

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  • Effect of the Inclusion of Transparency on the Thermal Field and Interface Shape in Long-term Sublimation Growth of SiC Crystals

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To determine if the transparency of SiC crystals affects the crystal growth during long-term sublimation growth and the difference between the results with and without the inclusion of transparency, a global solver that considers almost all of the effects in the heat and mass transport processes, such as the compressible effect, the convection effect, the buoyancy effect, flow coupling of argon gas and species, and the Stefan effect, was developed. The results indicate that the transparency of SiC crystals affects the temperature field distribution inside the crystal, seed holder and gas chamber, and the shape of the growth interface. Therefore, the transparency of SiC crystals should not be neglected in global simulations of SiC PVT growth.

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