原子層堆積法の酸化ガスがAl<sub>2</sub>O<sub>3</sub>膜の電気特性へ及ぼす影響

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書誌事項

タイトル別名
  • Influence of Oxidant Gas of Atomic Layer Deposition on Electrical Characteristics of Al<sub>2</sub>O<sub>3</sub> films
  • 原子層堆積法の酸化ガスがAl₂O₃膜の電気特性へ及ぼす影響
  • ゲンシソウ タイセキホウ ノ サンカ ガス ガ Al ₂ O ₃ マク ノ デンキ トクセイ エ オヨボス エイキョウ
  • Influence of oxidant gas of atomic layer deposition on electrical characteristics of Al2O3 films

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<p>We have investigated characteristics of Al2O3 thin films, which are deposited by plasma-enhanced atomic layer deposition (PE-ALD) and thermal ALD (TH-ALD) with oxygen plasma and H2O as oxidant gas, respectively, and Al(CH3)3 precursor. The Al2O3 film, which was deposited at 50℃, exhibited a large leakage current property. The positive (~1018 cm－3) and negative fixed charges (~1012 cm－2) occurred in Al2O3 film and at SiO2/Al2O3 interface by PE-ALD process at below 150℃, respectively. On the other hand, the opposite fixed charges were observed by TH-ALD process. This is due to the different reactive intermediates of Al-C-O and Al-O-Al-CH groups in Al2O3 film by PE-ALD and TH-ALD processes, respectively. The fixed charge in Al2O3 film disappeared over 200℃. The dipole (~1013 cm－2) also occurs at SiO2/Al2O3 interface and leads to positive flatband shift of 0.6 V. Therefore, we should pay careful attention to ALD condition such as oxidant gas and growth temperature considering to applications.</p>

収録刊行物

  • 表面と真空

    表面と真空 61 (5), 280-285, 2018-05-10

    公益社団法人 日本表面真空学会

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