Suppression of Acid Diffusion in Chemical Amplification Resists by Molecular Control of Base Matrix Polymers.

Yoshimura Toshiyuki, Shiraishi Hiroshi, Okazaki Shinji

doi:10.1143/jjap.34.6786

Suppression of acid diffusion during post-exposure baking (PEB) of chemical amplification resists is investigated from the standpoint of molecular control of base matrix polymers. Negative-type chemical amplification resists composed of cresol novolak-based matrix polymers, acid-catalyzed crosslinkers of melamine resins, and acid generators of onium salts are prepared. The molecular weight distributions of the base matrix polymers are controlled by means of a precipitation method. The resists are exposed with electron beams in isolated lines to evaluate the acid diffusion characteristics. Dependence of pattern sizes on the PEB time clearly shows that acid diffusion determines the resist pattern sizes based on Fick's law. The diffusion coefficients of resists with base matrix polymers with small polydispersities are smaller than those of resists with base matrix polymers with large polydispersities. Acid diffusion can still be suppressed by applying base matrix polymers with small weight-average molecular weights and small polydispersities. Diffusion coefficients can be further decreased by using base matrix polymers with more p-cresol components. A diffusion mechanism is proposed based on acid diffusion channels composed of active OH-groups and vacancies in the base matrix polymers.

Suppression of Acid Diffusion in Chemical Amplification Resists by Molecular Control of Base Matrix Polymers.

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Suppression of Acid Diffusion in Chemical Amplification Resists by Molecular Control of Base Matrix Polymers.

書誌事項

この論文をさがす

説明

収録刊行物

被引用文献 (5)*注記

参考文献 (32)*注記

キーワード

詳細情報 詳細情報について

書き出し

問題の指摘

詳細情報詳細情報について