Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF+2 and Linewidth on Titanium Silicidation.

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  • Tomita Hirofumi
    Fujitsu Laboratories Limited, 10–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan
  • Komiya Satoshi
    Fujitsu Laboratories Limited, 10–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan
  • Horii Yoshimasa
    Fujitsu Laboratories Limited, 10–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan
  • Nakamura Tomoji
    Fujitsu Laboratories Limited, 10–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan

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  • Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF<sup>+</sup> <sub>2</sub> and Linewidth on Titanium Silicidation

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The C49 and C54 fractions in TiSi2 are examined quantitatively by the grazing incidence X-ray diffraction method in order to study the effect of BF+2 implanted in Si substrates and linewidth on TiSi2 silicidation and the phase transition from C49 to C54. BF+2 implantation suppresses both silicidation and the phase transition, and the phase transition is also markedly suppressed on narrow lines. As a result, all the C49 TiSi2 remains for 0.5 µ m lines with BF+2 dose of 2× 1015 cm-2 after the 2nd rapid thermal annealing (800° C, 30 s). Furthermore, we have found that the grains of C49 TiSi2 are preferentially oriented to highly implanted substrates. This indicates that the phase of these grains is stable thermally and difficult to transform to C54 phase.

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