- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Knowledge Graph Search feature is available on CiNii Labs
- 【Updated on June 30, 2025】Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device.
-
- Akasaki Isamu
- Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
-
- Amano Hiroshi
- Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
-
- Sota Shigetoshi
- Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
-
- Sakai Hiromitsu
- Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan
-
- Tanaka Toshiyuki
- Pioneer Electronic Corporation, 1–1 Fujimi 6–chome, Tsurugashima–shi, Saitama 350–02, Japan
-
- Koike Masayoshi
- Toyoda Gosei Co., Ltd., 1 Nagahata, Ochiai, Haruhi–cho, Nishikasugai–gun, Aichi 452, Japan
Search this article
Description
Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.
Journal
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 34 (11B), L1517-L1519, 1995
The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1390282681221857664
-
- NII Article ID
- 210000038533
- 110003922611
- 130004520773
-
- NII Book ID
- AA10650595
-
- COI
- 1:CAS:528:DyaK2MXpsFKktLg%3D
-
- ISSN
- 13474065
- 00214922
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed