Ultra-Thin Fatigue-Free Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Films for Nonvolatile Ferroelectric Memories

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  • Kijima Takeshi
    Functional Devices Laboratory, SHARP Corporation, 273–1 Kashiwa, Kashiwa–shi, Chiba 277, Japan
  • Satoh Sakiko
    Functional Devices Laboratory, SHARP Corporation, 273–1 Kashiwa, Kashiwa–shi, Chiba 277, Japan
  • Matsunaga Hironori
    Functional Devices Laboratory, SHARP Corporation, 273–1 Kashiwa, Kashiwa–shi, Chiba 277, Japan
  • Koba Masayoshi
    Functional Devices Laboratory, SHARP Corporation, 273–1 Kashiwa, Kashiwa–shi, Chiba 277, Japan

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タイトル別名
  • Ultra-Thin Fatigue-Free Bi4Ti3O12 Films for Nonvolatile Ferroelectric Memories.

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説明

We have developed a new low temperature growth technique for Bi4Ti3O12 thin films using a MOCVD method in which an ultra-thin double buffer layer (5-nm thick Bi4Ti3O12/5-nm thick TiO2) is used to control the crystallization and fine grain structure. The 100-nm thick Bi4Ti3O12 thin films fabricated at 400°C showed an extremely smooth surface morphology and good electrical properties, namely, a large remanent polarization of P r=11 µ C/cm2, a coercive field of E c=90 kV/cm and a low leakage current I L=7× 10-9 A/cm2 at 3 V. Moreover, we successfully fabricated 50-nm ultra thin Bi4Ti3O12 films with P r=9 µ C/cm2 and E c=120 kV/cm at 3 V. For the first time, the fatigue free property, which is very important for nonvolatile ferroelectric memory (NVFRAM) applications, was confirmed up to 1× 1012 switching cycles.

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