Excimer-Laser Crystallization of Silicon-Carbon Films and Their Thin-Film Transistor Application.
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- Choi Kwangsoo
- Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
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- Uchida Yasutaka
- Department of Electronics & Information Science, The Nishi–Tokyo University, Uenoharamachi, Kitatsuru–gun, Yamanashi 409–01, Japan
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- Matsumura Masakiyo
- Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1 O–okayama, Meguro–ku, Tokyo 152, Japan
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説明
We have crystallized silicon-carbon ( SiC x) film using the ArF excimer-laser annealing method. From the AES (auger electron spectroscopy) depth profile, the crystallized film was confirmed with uniform concentration of carbon in the film. The resistivity of an undoped film with a carbon content of 0.2 was decreased to about 2.3× 102 Ω cm, and it changed only slightly even under intense illumination of AM1 100 mW/cm2. This film was used as the active layer of thin-film transistors (TFTs). The electron field-effect mobility was 0.35-2 cm2/Vs, which is similar to the typical mobility of the a-Si TFT.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (3), 1648-1651, 1996
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681222644736
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- NII論文ID
- 210000039006
- 130004522603
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- ISSN
- 13474065
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可