GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance.

DOI Web Site Web Site 被引用文献106件 参考文献6件
  • Kondow Masahiko
    RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan
  • Uomi Kazuhisa
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan
  • Niwa Atsuko
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan
  • Kitatani Takeshi
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan
  • Watahiki Seiji
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan
  • Yazawa Yoshiaki
    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji, Tokyo 185, Japan

書誌事項

公開日
1996
DOI
  • 10.1143/jjap.35.1273
公開者
The Japan Society of Applied Physics

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説明

We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.

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