Etching and Surface Modification of GaAs by Hydrogen Radicals Generated by Hydrogen Microwave Afterglow Method.

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  • Nagayoshi Hiroshi
    Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
  • Yamamoto Yuichi
    Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
  • Kamisako Koichi
    Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan

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説明

We etched crystalline GaAs using hydrogen radicals generated by the hydrogen microwave afterglow method and determined the dependence of etching rate on substrate temperature, microwave power, and sample distance from the quartz tube supplying hydrogen radicals. From the Arrhenius plot, the activation energy was found to be 0.43 eV. The surface morphology could be varied from flat to textured by changing the etching conditions.

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