Near-1.3-.MU.m High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots.

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  • Tackeuchi Atsushi
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–01, Japan
  • Nakata Yoshiaki
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–01, Japan
  • Muto Shunichi
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–01, Japan
  • Sugiyama Yoshihiro
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–01, Japan
  • Inata Tsuguo
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–01, Japan
  • Yokoyama Naoki
    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–01, Japan

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  • Near- 1.3-µm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots

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We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 µ m at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.

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