Open-Base Multi-Emitter HBTs with Increased Logic Functions.

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  • Imamura Kenichi
    Fujitsu Laboratories Ltd., 10–1, Morinosato–Wakamiya, Atsugi 243–01, Japan
  • Takatsu Motomu
    Fujitsu Laboratories Ltd., 10–1, Morinosato–Wakamiya, Atsugi 243–01, Japan
  • Mori Toshihiko
    Fujitsu Laboratories Ltd., 10–1, Morinosato–Wakamiya, Atsugi 243–01, Japan
  • Muto Shunichi
    Fujitsu Laboratories Ltd., 10–1, Morinosato–Wakamiya, Atsugi 243–01, Japan
  • Yokoyama Naoki
    Fujitsu Laboratories Ltd., 10–1, Morinosato–Wakamiya, Atsugi 243–01, Japan

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We have designed and tested a new functional device, an open-base multi-emitter heterojunction bipolar transistor (ME-HBT) which operates at room temperature. In this paper, we discuss the dependence of emitter doping concentration on the DC characteristcs of the ME-HBTs. The collector current turn-on volatge decreases to 0.7 V with an emitter doping of 1× 1019 cm-3. Using a ME-HBT, we constructed a 3-input AND/NOR gate, and confirmed that operation at room temperature was normal using an operating voltage of 2 V. We also discuss a problem with this ME-HBT circuit and offer a possible solution. We believe our approoach will prove useful for various ICs due to its simplicity and functionality.

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