Self-Aligned Passivation Technology for Copper Interconnection Using Copper-Aluminum Alloy.

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  • Awaya Nobuyoshi
    NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi, Kanagawa 243–01, Japan
  • Kobayashi Toshio
    NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi, Kanagawa 243–01, Japan

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  • Self-Aligned Passivation Technology for

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A self-aligned passivation procedure for fabricating copper interconnection has been developed using Al-Cu alloy formation. With annealing at 350°C, very thin aluminum on the exposed copper wire reacts with copper to form Al-Cu intermetallic compound, whereas the underlying copper remains as a pure metal. Using the difference in the electrode potential between pure Al and the intermetallic compound, the unreacted aluminum on SiO2 can be selectively removed by acid treatment. Additional annealing at 350°C in the gaseous mixture of H2 and O2 creates a thin layer of aluminum oxide on the compound surface. This improves the resistance of the copper wire to oxidation. The passivated copper film is very stable at 250°C in air with only a small increase in resistivity (about 5%), while the sheet resistance of pure copper increases dramatically with time. The passivation also improves the adhesiveness of insulating film on the surface.

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