Selective Lateral Etching of Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs Heterojunction Structure Using the Redox Solution of I<sub>2</sub>/KI
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- Kim Dong Hyun
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373–1, Kusong–Dong, Yusong–Gu, Taejon, 305–701, Korea
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- Lee Hee Chul
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373–1, Kusong–Dong, Yusong–Gu, Taejon, 305–701, Korea
書誌事項
- タイトル別名
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- Selective Lateral Etching of Al0.3Ga0.7As/GaAs Heterojunction Structure Using the Redox Solution of I2/KI.
- Selective Lateral Etching of Al0.3Ga0.7
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抄録
Selective lateral etching for an Al0.3Ga0.7As/GaAs system was conducted with iodine-potassium iodide ( I2/KI) redox solution having high preferential etching characteristics. The selectivity of Al0.3Ga0.7As relative to GaAs varied with the molar ratio of I2/KI, pH, stripe direction, and stirring speed of the solution. The undercut widths of Al0.3Ga0.7As below the GaAs layer were measured by observing the etched cross-section with a scanning electron microscope. For the [100] directional stripe, the undercut width of Al0.3Ga0.7As was measured up to about 3 µ m after etching for 1 min under the etching conditions of [I2]/[KI]=0.67 and pH=2.76. As a new application to the Al xGa1- xAs/GaAs heterojunction bipolar transistor (HBT) with x=< 0.3, selective lateral etching was carried out to reduce the extrinsic base-collector capacitance of the HBT. As the result of capacitance-voltage (C-V) measurement, the base-collector capacitance of the lateral etched HBT was reduced to about 50% of that of the conventional HBT.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (3A), L253-L255, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681224592896
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- NII論文ID
- 110003925502
- 210000042491
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4163422
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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