Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor by Separation by IMplanted OXygen (nMOSFET/SIMOX).

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  • Ishiyama Toshihiko
    NTT Basic Research Laboratories, 3–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan
  • Omura Yasuhisa
    NTT System Electronics Laboratories, 3–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan

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  • Influences of Superficial Si Layer Thic

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The band-to-band tunneling current characteristics of buried-channel nMOSFETs/SIMOX are investigated. It is shown that the drain current due to band-to-band tunneling current increases with decreasing superficial Si layer thickness. Two-dimensional device simulation results indicate that the decrease in superficial Si layer thickness leads to an increase in surface electric field in the gate-overlapped drain region. The device simulation results also suggest that the doping profile in the diffusion region affects the surface electric field moderately. The expression of surface electric field is improved to include the terms that depend on Si layer thickness and diffusion profile. This improved expression results in a quantitative coincidence between calculation and experimental results.

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