Dynamics of Phasons; Phase Defects Formed on Dimer Rows, and Related Structural Changes of the Si(100) Surface at 80 K Studied by Scanning Tunneling Microscopy.

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  • Shigekawa Hidemi
    Institute of Materials Science, and Center for TARA, Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba 305, Japan
  • Miyake Koji
    Institute of Materials Science, and Center for TARA, Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba 305, Japan
  • Ishida Masahiko
    Institute of Materials Science, and Center for TARA, Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba 305, Japan
  • Hata Kenji
    Institute of Materials Science, and Center for TARA, Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba 305, Japan

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  • Dynamics of Phasons Phase Defects Forme

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Abstract

Type-P defects, which are mobile phase defects on dimer rows with a structure similar to that of the type-C defect, were observed on Si(100) surface at 80 K, however, the observed surface structure was mainly c(4× 2), contrary to the previous results obtained at 6 K. Complete p(2× 2) arrangement was unstable, and type-P defects tended to form pairs with other type-P defects on neighboring dimer rows, resulting in a reduction of the area with complete p(2× 2) arrangement. This is the first observation of the interacting phasons; type-P defects formed on Si(100) surface. The observed results were analyzed with the Ising model, and domain boundaries between c(4× 2) and p(2× 2) arrangements were found to play an important role in the dynamics of type-P defects at 80 K.

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