GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure.

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  • Ohnoki Noriyuki
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226, Japan
  • Hatori Nobuaki
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226, Japan
  • Mizutani Akimasa
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226, Japan
  • Koyama Fumio
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226, Japan
  • Iga Kenichi
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226, Japan

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  • GaInAs AlGaInAs Semiconductor Lasers wi

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An AlAs oxide current confinement structure based on an InP substrate has been demonstrated for the first time to realize low threshold long wavelength surface emitting lasers. The oxidized width is confirmed to be well controllable by choosing suitable oxidation time and temperature. We fabricated an metalorganic chemical vapor deposition (MOCVD) grown 1.65-µ m wavelength GaInAs/AlGaInAs multiple quantum well (MQW) edge emitting laser with the AlAs-oxide confinement structure of 3 µ m-wide and 15 µ m-wide windows. A 3 µ m-wide window oxidized laser having uncoated facets exhibits a threshold of 51 mA for device with a 800-µ m-long cavity. We have obtained a threshold current density of 1.3 kA/cm2 for 3 µ m-wide window devices. The results show a potential application of the proposed structure for low threshold long-wavelength surface emitting lasers.

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