Spontaneous Formation of Nanostructures in In<sub>x</sub>Ga<sub> 1-x</sub>As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates

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  • Vaccaro Pablo O.
    ATR Adaptive Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
  • Fujita Kazuhisa
    ATR Adaptive Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan
  • Watanabe Toshihide
    ATR Adaptive Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan

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タイトル別名
  • Spontaneous Formation of Nanostructures in InxGa1-xAs Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates.
  • Spontaneous Formation of Nanostructures

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Inx Ga1-x As was deposited by molecular beam epitaxy on GaAs substrates with various orientations. We found that an In0.5Ga0.5As epilayer grown on a (311)A-oriented substrate shows a corrugated nanostructure with a period of 35 nm along the (\=233) direction. The photoluminescence spectrum of a sample where the In0.5Ga0.5As nanostructure was covered with a GaAs cap layer shows a strong peak at 1.28 eV up to room temperature. We also deposited an amount of InAs equivalent to zero, one, two and three monolayers on GaAs (411)A, (211)A and (111)A just oriented and misoriented substrates. The surface morphology dependence on the amount of InAs deposited was observed by atomic force microscopy. A rich variety of InAs nanostructures was found to be formed on the surface.

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