Time Constant for High-Field Domain Formation in Multiple Quantum Well Sequential Resonant Tunneling Diodes.

DOI Web Site Web Site Web Site 参考文献20件
  • Shimada Yozo
    Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato–ku, Tokyo 106, Japan
  • Hirakawa Kazuhiko
    Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato–ku, Tokyo 106, Japan

書誌事項

タイトル別名
  • Time Constant for High-Field Domain For

この論文をさがす

抄録

We have investigated the frequency dependence of the tunneling current-voltage (I-V) characteristics of GaAs/ Al0.3Ga0.7As multiple quantum well (MQW) sequential resonant tunneling diodes. Although clear periodic negative differential resistances (NDRs) are observed in the dc measurement, such NDRs are found to disappear at high frequencies, indicating a finite time constant necessary for the formation of stable high-field domains. The observed time constant has been well explained by the product of the capacitance of a single tunneling barrier and the intrinsic tunneling resistance in the low-field domain.

収録刊行物

参考文献 (20)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ