Formation of Metal-Insulator-Semiconductor Structure (B/Hexagonal BN/Graphite) by Plasma Chemical Vapor Deposition.

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  • Osaka Yukio
    Department of Electrical Engineering, Hiroshima–Denki Institute of Technology, Hiroshima 739–03, Japan
  • Nakagawa Nahotoshi
    Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Higashi–Hiroshima 724, Japan
  • Kohno Kenji
    Department of Electrical Engineering, Hiroshima–Denki Institute of Technology, Hiroshima 739–03, Japan

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タイトル別名
  • Formation of Metal-Insulator Semiconduc

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A new technique for fabrication of a metal-insulator-semi-conductor (MIS) structure (B/hexagonal BN/graphite) on graphite is presented. Hexagonal BN(h-BN) and B films were deposited by plasma chemical vapor deposition (CVD). The B films were n-type semiconductors. Raman measurement of the B film showed that the B-configuration of these films is similar to the one in tetragonal B crystal. The capacitance-voltage (C-V) characteristics of the MIS structure at 100 kHz with a 47 nm thick h-BN layer showed inversion behavior. This behavior seems to be due to the small energy gap (0.6 eV) of B films.

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