Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys.

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  • Yang Tao
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Nakajima Sadanojo
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan
  • Sakai Shiro
    Department of Electrical and Electronic Engineering, The University of Tokushima, 2–1 Minami–Josanjima, Tokushima 770, Japan

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  • Tight-Binding Calculation of Electronic

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The electronic structure of InN xAs1- x ordered alloys (x=0.25, 0.5 and 0.75) are calculated based on a semi-empirical tight-binding method. The alloy is found to have direct band gaps throughout the entire composition range. The band-gap bowing parameter c in E g=0.36+1.53x+cx(x-1) eV of the alloy InN xAs1- x is larger with larger valence-band discontinuity between InAs and InN, and is 4.22 eV if a theoretical value of 3.79 eV given by Harrison's theory is assumed.

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