Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on (311)B-GaAs Substrate.
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- Kamada Hidehiko
- NTT Basic Research Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan
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- Temmyo Jiro
- Opto–electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan
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- Notomi Masaya
- Opto–electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan
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- Furuta Tomofumi
- NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan
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- Tamamura Toshiaki
- Opto–electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi, Kanagawa 243–01, Japan
書誌事項
- タイトル別名
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- Dephasing Processes in Self-Organized S
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抄録
Single-dot photoluminescence measurements are undertaken on a number of individual InGaAs disks spontaneously formed on the GaAs-(311)B face. Well-isolated distinctive narrow single-dot luminescence lines, the narrowest of which is 34 µ eV in FWHM, is measured using a microscope and their evolution with excitation density is examined. Under very low excitation, individual dot luminescence is well approximated by the Lorentzian lineshape. Excitation via the barrier continuum results in very low luminescence saturation density and simultaneous broadening into a non-Lorentzian lineshape. In contrast, excitation resonant with excited states, causes no such broadening, but saturation power is about three orders of magnitude larger than under barrier excitation. Such phenomena are explained by different carrier flows into the dot states. Carrier-carrier scattering is discussed as a primary dephasing process that causes line broadening.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (6B), 4194-4198, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681225160832
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- NII論文ID
- 210000041403
- 110003947148
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- NII書誌ID
- AA10457675
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- COI
- 1:CAS:528:DyaK2sXkvFGgtro%3D
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4260246
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可