Ultrafast Photoconductive Detectors Based on Semi-Insulating GaAs and InP.
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- Tani Masahiko
- Kansai Advanced Research Center, Communications Research Laboratory, M.P.T. Iwaoka, Nishi–ku, Kobe 651–24, Japan
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- Sakai Kiyomi
- Kansai Advanced Research Center, Communications Research Laboratory, M.P.T. Iwaoka, Nishi–ku, Kobe 651–24, Japan
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- Mimura Hidenori
- Research Institute of Electrical Communication, Tohoku University, Aoba–ku, Sendai 980–77, Japan
書誌事項
- タイトル別名
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- Ultrafast Photoconductive Detectors Bas
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抄録
Photoconductive dipole antennas fabricated on semi-insulating (SI) GaAs and SI-InP were used to detect terahertz (THz) pulses. The responses of these long-carrier-lifetime photoconductive detectors were compared to that of the photoconductive antenna fabricated on a low-temperature grown GaAs (LT-GaAs) with a subpicosecond carrier lifetime. The SI-InP-based photoconductive detector showed a higher responsivity and a better signal-to-noise ratio (SNR) than the LT-GaAs-based photoconductive detector at low gating laser powers. The SI-GaAs-based detector, however, showed a responsivity comparable to that of the LT-GaAs photoconductive detector only at very weak gating laser power, and the SNR of the SI-GaAs-based detector was poor for overall gating laser powers due to the high background noise originating from a large amount of stray photocurrent.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (9A/B), L1175-L1178, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681225213568
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- NII論文ID
- 110003925779
- 130004524135
- 210000042290
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 4316905
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可