Ultrafast Photoconductive Detectors Based on Semi-Insulating GaAs and InP.

DOI Web Site Web Site Web Site 被引用文献14件 参考文献21件
  • Tani Masahiko
    Kansai Advanced Research Center, Communications Research Laboratory, M.P.T. Iwaoka, Nishi–ku, Kobe 651–24, Japan
  • Sakai Kiyomi
    Kansai Advanced Research Center, Communications Research Laboratory, M.P.T. Iwaoka, Nishi–ku, Kobe 651–24, Japan
  • Mimura Hidenori
    Research Institute of Electrical Communication, Tohoku University, Aoba–ku, Sendai 980–77, Japan

書誌事項

タイトル別名
  • Ultrafast Photoconductive Detectors Bas

この論文をさがす

抄録

Photoconductive dipole antennas fabricated on semi-insulating (SI) GaAs and SI-InP were used to detect terahertz (THz) pulses. The responses of these long-carrier-lifetime photoconductive detectors were compared to that of the photoconductive antenna fabricated on a low-temperature grown GaAs (LT-GaAs) with a subpicosecond carrier lifetime. The SI-InP-based photoconductive detector showed a higher responsivity and a better signal-to-noise ratio (SNR) than the LT-GaAs-based photoconductive detector at low gating laser powers. The SI-GaAs-based detector, however, showed a responsivity comparable to that of the LT-GaAs photoconductive detector only at very weak gating laser power, and the SNR of the SI-GaAs-based detector was poor for overall gating laser powers due to the high background noise originating from a large amount of stray photocurrent.

収録刊行物

被引用文献 (14)*注記

もっと見る

参考文献 (21)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ