Theory of Semiconductor Superjunction Devices.

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  • Fujihira Tatsuhiko
    Matsumoto Factory, Fuji Electric Co., Ltd., 4–18–1 Tsukama, Matsumoto 390, Japan Graduate School of Engineering, Yamanashi University, 4–3–11 Takeda, Koufu 400, Japan

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  • Theory of Semiconductor Superjunction D

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A new theory of semiconductor devices, called “semiconductor superjunction (SJ) theory”, is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily doped, thin semiconductor layers. By controlling the degree of doping and the thickness of these layers, according to the SJ theory, this structure operates as a pn junction with low on-resistance and high breakdown voltage. Analytical formulas for the ideal specific on-resistance and the ideal breakdown voltage of SJ devices are theoretically derived. Analysis based on the formulas and device simulations reveals that the on-resistance of SJ devices can be reduced to less than 10-2 that of conventional devices.

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