Influences of Cu and Fe Impurities on Oxygen Precipitation in Czochralski-Grown Silicon.

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  • Shen Bo
    Institute for Materials Research, Tohoku University Sendai 980–77, Japan
  • Jablonski Jaroslaw
    Institute for Materials Research, Tohoku University Sendai 980–77, Japan
  • Sekiguchi Takashi
    Institute for Materials Research, Tohoku University Sendai 980–77, Japan
  • Sumino Koji
    Institute for Materials Research, Tohoku University Sendai 980–77, Japan

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  • Influences of Cu and Fe Impurities on O

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Abstract

Characteristics of oxygen precipitation in Czochralski-grown silicon (CZ-Si) intentionally contaminated with Cu or Fe are investigated by means of Fourier-transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), electron-beam-induced-current (EBIC) mapping and etch pit observation. It is found that oxygen precipitation is not influenced by the presence of Cu impurities, while it is enhanced significantly by the presence of Fe impurities even if the concentration of Fe is much lower than that of Cu. Precipitations of supersaturated Cu and O impurities are found to proceed independently of each other in Si crystals. Oxygen precipitates in an Fe-contaminated specimen are much denser and smaller than those in a noncontaminated specimen. Fe impurities seem to react with minute Si oxide particles which are present in as-grown CZ-Si crystals and reduce the nucleation barrier for oxygen precipitation.

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