Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy.
-
- Kobayashi Nobuhiko
- Department of Physics, Graduate School of Science, University of Tokyo, Hongo 7–3–1, Bunkyo–ku, Tokyo 113, Japan
-
- Hirose Kenji
- NEC Research Institute, 4 Independence way, Princeton, NJ 08540, U.S.A.
-
- Tsukada Masaru
- Department of Physics, Graduate School of Science, University of Tokyo, Hongo 7–3–1, Bunkyo–ku, Tokyo 113, Japan
書誌事項
- タイトル別名
-
- Theoretical Study of Silicon Adatom Tra
この論文をさがす
抄録
We have investigated the electronic structures of a silicon adatom displaced from a silicon surface with the tip of a scanning tunneling microscope using the recursion-transfer-matrix method. This method is an effective means of calculation for electronic states of a bielectrode system under electric field and current. The adiabatic potential surfaces of the adatom moving from the surface to the tip and the corresponding induced electron density distributions are presented for several values of bias voltage. A decrease in the activation barrier height is seen for both positive and negative bias cases when the tip-surface distance is 11 bohrs, while a monotonous decrease is seen only for the positive bias case at a tip-surface distance of 8 bohrs.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 36 (6B), 3791-3795, 1997
The Japan Society of Applied Physics
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390282681225519232
-
- NII論文ID
- 210000041304
- 110003947057
-
- NII書誌ID
- AA10457675
-
- COI
- 1:CAS:528:DyaK2sXkvFGht7o%3D
-
- ISSN
- 13474065
- 00214922
-
- NDL書誌ID
- 4260158
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可