Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs.

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  • Takeuchi Kanji
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226–8503, Japan
  • Miyamoto Tomoyuki
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226–8503, Japan
  • Kageyama Takeo
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226–8503, Japan
  • Koyama Fumio
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226–8503, Japan
  • Iga Kenichi
    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori–ku, Yokohama 226–8503, Japan

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タイトル別名
  • Chemical Beam Epitaxy Growth and Charac

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説明

A GaNAs layer has been grown on a GaAs substrate using chemical beam epitaxy (CBE) with a radio frequency (RF) radical nitrogen source for the first time. The nitrogen (N) composition was well-controlled by the N2 flow rate and was increased up to 2.7%, maintaining a good crystal quality. The maximum N composition was estimated to be 20% by a secondary ion mass spectroscopy (SIMS) measurement. The N composition estimated from both X-ray diffraction measurements and SIMS measurements were in good agreement. This shows that the N composition can simply be determined by X-ray diffraction measurements. The optical absorption measurement of the grown GaNAs was also carried out. The bandgap bowing parameter of GaNAs was found to be not a constant and varied between 15-23 eV for N<2.7%. An empirical expression of bandgap vs. composition was obtained for a N composition below 3%.

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