Metalorganic Chemical Vapor Deposition of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>x</sub> Thin Films Using Bis-Dipivaloylmethanato-Barium Bis-Tetraethylenepentamine Adducts as a Novel Barium Source

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  • Zama Hideaki
    Superconductivity Research Laboratory, International Superconductivity Technology Center, 10–13 Shinonome 1–Chome, Koto–ku, Tokyo 135, Japan
  • Morishita Tadataka
    Superconductivity Research Laboratory, International Superconductivity Technology Center, 10–13 Shinonome 1–Chome, Koto–ku, Tokyo 135, Japan

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タイトル別名
  • Metalorganic Chemical Vapor Deposition of YBa2Cu3Ox Thin Films Using Bis-Dipivaloylmethanato-Barium Bis-Tetraethylenepentamine Adducts as a Novel Barium Source.
  • Metalorganic Chemical Vapor Deposition

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説明

We have prepared YBa2Cu3O x thin films by metalorganic chemical vapor deposition using bis-dipivaloylmethanato-barium bis-tetraethylenepentamine adducts ( Ba(DPM)2-tetraen2) as a new Ba precursor. This precursor has much higher volatility than typical Ba sources such as Ba(DPM)2. A deposition rate of approximately 50 nm/h is achieved when the vaporizing temperature of Ba(DPM)2-tetraen2 is set at 140° C. This is seven times faster than that achieved using Ba(DPM)2 at a vaporizing temperature of 187° C. A 200-nm-thick film grown on a MgO(100) substrate has a minimum channeling yield of 6%. The compositional deviation of the films is ± 4% for up to 100 h of use.

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