Impulse Response of Metal-Semiconductor-Metal Photodetectors Using a Conformal Mapping Technique and Extracted Circuit Parameters.

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  • Wohlmuth Walter
    Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801, USA
  • Arafa Mohamed
    Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801, USA
  • Fay Patrick
    Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801, USA
  • Seo Jong–Wook
    School of Electronic and Electrical Engineering, Hong–ik University, 72–1, Sangsu–dong, Mapo–ku, Seoul 121–791, Korea
  • Adesida Ilesanmi
    Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801, USA

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  • Impulse Response of Metal-Semiconductor

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The impulse response of interdigitated InGaAs metal-semiconductor-metal photodetectors (MSMPDs) is modeled using a two dimensional transit-time calculation coupled with an equivalent circuit model of the intrinsic and parasitic elements of the MSMPDs. The simulated and experimental bandwidths of InGaAs MSMPDs with resistive transparent indium-tin-oxide and low-resistivity opaque titanium/gold electrodes are in excellent agreement and were found to be 6 and 11 GHz, respectively. The electrode width and spacing of these devices are 3 µ m and the active area is 2500 µ m2. This model aids in the design of MSMPDs with various electrode geometries, electrode materials, semiconductor materials, and methods of illumination.

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