SrTiO3 Capacitor with Relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency.
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- B Nishimura Takeshi
- Kansai Electronics Research Laboratories, NEC Corporation
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- Iwata Naotaka
- Kansai Electronics Research Laboratories, NEC Corporation
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- Takemura Koichi
- Fundamental Research Laboratories, NEC Corporation
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- Kuzuhara Masaaki
- ULSI Device Development Laboratories, NEC Corporation
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- Miyasaka Yoichi
- Fundamental Research Laboratories, NEC Corporation
Bibliographic Information
- Other Title
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- SrTiO3 Capacitor with Relative Dielectr
- SrTiO<sub> 3</sub> Capacitor with Relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency
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Abstract
An RF-sputtered SrTiO3(STO) capacitor was fabricated on a GaAs substrate. Microwave characterization exhibited a relative dielectric constant(εr) of 200 up to 20GHz.This high εr was obtained when the base electrode and the STO film were sputter-deposited in succession. A novel Pt/Ti/Pt/Ti base metal exhibited high tolerance against ion-milling, resulting in lower Ohmic resistance compared to the conventional base metal, Pt/Ti.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (12B), L1683-L1684, 1996
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390282681226141056
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- NII Article ID
- 110003924926
- 210000040415
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- NII Book ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL BIB ID
- 4121653
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed