Local Tunneling Barrier Height on Si(111) Reconstructed Surfaces.

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  • Horiguchi Nobuhiro
    Muroran Institute of Technology, 27–1 Mizumoto, Muroran, Hokkaido 050–8585, Japan
  • Yonei Kazunori
    Muroran Institute of Technology, 27–1 Mizumoto, Muroran, Hokkaido 050–8585, Japan
  • Miyano Masahiro
    Muroran Institute of Technology, 27–1 Mizumoto, Muroran, Hokkaido 050–8585, Japan

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  • Local Tunneling Barrier Height on Si 11

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We observed local tunneling barrier height images on reconstructed Si(111) surfaces. Local tunneling barrier height on √{3}× √{3} reconstructed structure was almost the same as that of 7× 7 structure. In contrast, local tunneling barrier height on the c(4× 2) reconstructed structure was lower than that on the 7× 7 structure. Both reconstructed structures were induced by transition metal atom adsorption. This is influence of three-dimensional spatial distribution of surface wave function. We also found that local tunneling barrier height on the ring cluster structure was lower than that on 7× 7 structure.

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