Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Film Vacuum Deposited on ZnS Substrate.
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- Uchida Takashi
- Department of Electronic Engineering, The National Defense Academy, Hashirimizu, Yokosuka 239, Japan
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- Shimizu Takashi
- Department of Electronic Engineering, The National Defense Academy, Hashirimizu, Yokosuka 239, Japan
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- Yasuoka Yoshizumi
- Department of Electronic Engineering, The National Defense Academy, Hashirimizu, Yokosuka 239, Japan
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説明
The Hall mobility of Ge thin films deposited on ZnS substrates at a substrate temperature of 600° C was 360 cm2/ V·s for a hole concentration of 3× 1017 cm-3. This value was about 3.6 times larger than that obtained for Ge films deposited on Si3N4 substrates. A point-contact warm carrier device fabricated using Ge film deposited on ZnS substrate has a detected voltage for CO2 laser radiation about ten times higher than that of a device fabricated using Ge film deposited on Si3N4 substrate.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (11), 5689-5690, 1996
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681226300928
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- NII論文ID
- 110003904920
- 210000039907
- 130004522116
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可